- 您现在的位置：买卖IC网 > Sheet目录513 > SI7421DN-T1-GE3 (Vishay Siliconix)MOSFET P-CH D-S 30V PPAK 1212-8
Si7421DN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.025 at V GS = - 10 V
0.043 at V GS = - 4.5 V
I D (A)
- 9.8
- 7.4
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New PowerPAK ? Package
- Low Thermal Resistance, R thJC
- Low 1.07 mm Profile
PowerPAK 1212-8
APPLICATIONS
? Battery Switch
3.30 mm
1
S
S
3.30 mm
S
2
3
S
4
G
8
D
7
D
D
G
6
D
5
Bottom View
D
Ordering Information: Si7421DN-T1-E3 (Lead (Pb)-free)
Si7421DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 9.8
-7
- 30
- 6.4
- 4.6
A
Continuous Source Current (Diode Conduction) a
I S
-3
- 1.3
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
3.6
1.9
- 55 to 150
260
1.5
0.8
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
28
65
2.9
35
81
3.8
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72416
S-83051-Rev. D, 29-Dec-08
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI7423DN-T1-GE3
MOSFET P-CH D-S 30V PPAK 1212-8
SI7425DN-T1-GE3
MOSFET P-CH D-S 12V PPAK 1212-8
SI7431DP-T1-GE3
MOSFET P-CH 200V 2.2A 8-SOIC
SI7440DP-T1-GE3
MOSFET N-CH D-S 30V PPAK 8SOIC
SI7447ADP-T1-GE3
MOSFET P-CH 30V 35A PPAK 1212-8
SI7454CDP-T1-GE3
MOSFET N-CH 100V 8-SOIC
SI7455DP-T1-GE3
MOSFET P-CH D-S 80V PPAK 8SOIC
SI7456DP-T1-GE3
MOSFET N-CH 100V 5.7A PPAK 8SOIC
相关代理商/技术参数
SI7423DN
制造商:Vishay Siliconix 功能描述:MOSFET P POWERPAK
SI7423DN-T1-E3
功能描述:MOSFET 30V 11.7A 3.8W 18mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7423DN-T1-GE3
功能描述:MOSFET 30V 11.7A 3.8W 18mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7425DN
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET
SI7425DN-T1-E3
功能描述:MOSFET 12V 12.6A 3.6W 16mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7425DN-T1-GE3
功能描述:MOSFET 12V 12.6A 3.6W 16mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI742DN
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI7430DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) WFET
